MRF7S19100NR1 MRF7S19100NBR1
3
RF Device Data
Freescale Semiconductor
Table 5. Electrical Characteristics (TC
= 25
°C unless otherwise noted) (continued)
Characteristic
Symbol
Min
Typ
Max
Unit
Typical Performances
(In Freescale Test Fixture, 50
οhm system) VDD
= 28 Vdc, I
DQ
= 1000 mA, 1930-1990 MHz Bandwidth
Video Bandwidth @ 100 W PEP Pout
where IM3 = -30 dBc
(Tone Spacing from 100 kHz to VBW)
ΔIMD3 = IMD3 @ VBW frequency - IMD3 @ 100 kHz <1 dBc (both
sidebands)
VBW
?
30
?
MHz
Gain Flatness in 60 MHz Bandwidth @ Pout
= 29 W Avg.
GF
?
1
?
dB
Average Group Delay @ Pout
= 100 W CW, f = 1960 MHz
Delay
?
2.15
?
ns
Part-to-Part Insertion Phase Variation @ Pout
= 100 W CW,
f = 1960 MHz, Six Sigma Window
ΔΦ
?
28.8
?
°
Gain Variation over Temperature
(-30°C to +85°C)
ΔG
?
0.019
?
dB/°C
Output Power Variation over Temperature
(-30°C to +85°C)
ΔP1dB
?
0.015
?
dBm/°C
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